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Table 1 Details of the investigated samples. x In and R [hkl] were calculated from RSM peak data, and h QD and ρ QD were determined for 1 μm × 1 μm and 10 μm × 10 μm AFM images, respectively [13]. The major dislocation type was determined based on several 20 μm × 20 μm SEM pictures

From: Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

Sample

Material

Strain

T g (°C)

X In

R [011] (%)

R [01-1] (%)

h QD (nm)

ρQD (cm−2)

Maj. Dislocation type

A

GaInAs

CS

520

0.142

1.60

1.40

13

5.0 × 109

α[0–11]

B

GaInP

CS

520

0.618

1.50

1.60

14

5.1 × 109

α[0–11]

C

GaInP

CS

430

0.617

1.70

1.60

13

5.6 × 109

β[011]

D

GaInP

TS

430

0.354

2.60

1.90

16

4.2 × 109

α[011]

E

GaInP

TS

430

0.34

0.00

0.00

No QDs

No QDs

No dislocations

F

GaInP

TS

430

No QDs

No QDs

β[0–11]

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