Table 1 Devices
From: Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers
Device | Dopant position | Dopant concentration (×1011 cm-2) | Number of electrons per QD | Barrier height (meV) |
---|---|---|---|---|
B44 | QD layer | 2.7 | 2.4 | 25 |
B45 | Middle of AlGaAs layers | 2.7 | 2.8 | 70 |
B46 | Modulation dopping | 2.7 | 2.8 | 60 |
B52 | QD layer | 5.4 | 4.7 | 79 |
B53 | Middle of AlGaAs layers | 5.4 | 6.1 | 130 |
B54 | Middle of AlGaAs layers | 8.1 | 9 | 200 |