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Figure 3 | Nanoscale Research Letters

Figure 3

From: Ordered Arrays of SiGe Islands from Low-Energy PECVD

Figure 3

AFM gradient images of a patterned region following the deposition of 2.8 nm of Ge at 750°C. The growth rate was a 0.015 nm s−1 and b 0.1 nm s−1. In (a) the AR is 0.2 with a volume mean value of 7.118 × 10−3 μm3, while in (b) AR is ~0.11 with a volume of 1.380 × 10−3 μm3

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