Figure 3

AFM gradient images of a patterned region following the deposition of 2.8 nm of Ge at 750°C. The growth rate was a 0.015 nm s⁻¹ and b 0.1 nm s⁻¹. In (a) the AR is 0.2 with a volume mean value of 7.118 × 10⁻³ μm³, while in (b) AR is ~0.11 with a volume of 1.380 × 10⁻³ μm³