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Table 1 Ge content x on patterned and unpatterned regions for a range of deposition thicknesses and growth rates

From: Ordered Arrays of SiGe Islands from Low-Energy PECVD

Thickness (nm) Growth rate (nm/s) Temperature (°C) x Ge on patterned area (%) x Ge on flat (%)
3.2 0.1 750 0.51 ± 2 0.48 ± 2
0.9 0.1 750 0.44 ± 1 0.45 ± 6
2.8 0.1 750 0.52 ± 2 0.46 ± 1
2.8 0.015 750 0.51 ± 2 0.55 ± 4
  1. The error bars refer to the single measurement. The data reported were acquired from close to the centers of patterned grids of pits