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Table 1 XPS CL spectra fitting results and VBM positions obtained by linear extrapolation of the leading edge to the extended base line of the VB spectra

From: Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

Sample

State

Binding energy (eV)

Bonding

FWHM (eV)

Diamond

C1 s

284.90

C–C

1.21

  

286.00

C–O

1.89

 

VBM

1.32

 

InN

In 3d5/2

443.42

In–N (screened)

1.09

  

444.21

Adsorbed In–O

1.09

  

445.27

In–N (unscreened)

2.45

 

VBM

0.66

 

InN/diamond

In 3d5/2

442.59

In–N (screened)

1.26

  

443.50

In–N (unscreened)

2.19

 

C1 s

283.80

C–C (screened)

1.28

  

284.50

C–C (unscreened)

2.43

  1. All the binding energies are referenced to the Fermi level (0 eV)

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