Figure 2From: Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During GrowthContinuous STM images of surface structure transitions on the InAs WL by applying voltage from −0.5 to +0.5 V without As4 irradiation (substrate temperature: 240°C). White points in a–d indicate positions before applying voltage. Dot structures were appeared at particular site in (b–e)Back to article page