Figure 4From: Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During GrowthSTMBE images of a dot grown in a hole structure under In and As4 irradiations at 300°C and its line profiles. a Shows the hole structure, b and c were images after supplying additional 0.02 ML and 0.04 ML of InAs, respectivelyBack to article page