Figure 1
From: Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
AFM image (2 × 2 μm 2) of a the as-grown SiGe QDs, b the Si capping layer grown at 300°C with a thickness of 50 nm. c the Si capping layer after in-situ annealing at 640°C for 10 min. d Cross-sectional TEM image of the sample shown in (c).