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Figure 1 | Nanoscale Research Letters

Figure 1

From: In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

Figure 1

Left: RHEED patterns during two-step Si buffer layer growth on stripe-patterned Si substrates recorded after 0, 5, 10, and 35 nm Si growth at 450°C and subsequent 2 and 17 nm Si growth at 520°C from (a) to (f), respectively. The {113} and {119} facet spots, as well as the corresponding sidewall inclination angle α (see schematic illustration of Fig. 2) are marked by the arrows and dashed lines. Right: Normalized intensity evolution of the specular spot (purple), the {113} (red), and {119} (blue) facet spots arising from the sidewalls of the stripes plotted as a function of the Si buffer thickness. At 25 nm Si deposition, the substrate temperature increased from 450 to 520°C

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