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Nanoscale Research Letters
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Figure 2 | Nanoscale Research Letters

Figure 2

From: In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

Figure 2

Schematic illustration of the stripe geometry a as well as of the corresponding RHEED patterns b developed during buffer growth. Due to the {11n} sidewall facettation of the stripes with an inclination α relative to the in plane [110] direction, facet spots appear in the RHEED patterns that are tilted by α with respect to the specular spot

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