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Figure 2 | Nanoscale Res Lett

Figure 2

From: n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

Figure 2

Top : SEM image of a GaAs nanowire from sample c connected to two electrodes for electrical measurements. The contact spacing is 1.3 μm. Bottom: I-V characteristics of the untapered GaAs nanowires grown at 400°C: a grown without dopant supply, b grown under supply of DitBuSi (IV/III = 0.52), c grown under supply of TESn (IV/III = 0.08). The second inset shows the I–V curves of a and b in a more adequate current scale.

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