Figure 2From: n-Type Doping of Vapor–Liquid–Solid Grown GaAs NanowiresTop : SEM image of a GaAs nanowire from sample c connected to two electrodes for electrical measurements. The contact spacing is 1.3 μm. Bottom: I-V characteristics of the untapered GaAs nanowires grown at 400°C: a grown without dopant supply, b grown under supply of DitBuSi (IV/III = 0.52), c grown under supply of TESn (IV/III = 0.08). The second inset shows the I–V curves of a and b in a more adequate current scale.Back to article page