Figure 3
From: n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
Measured wire resistance versus the wire radius for a IV/III ratio of 0.08 for two different annealing cycles. The resistance is normalized to wires with 1-μ length. In addition, modeled data for three different carrier concentrations (5 × 1017 cm-3, 1 × 1018 cm-3, 2 × 1018 cm-3) are given in dashed lines.