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Figure 4 | Nanoscale Research Letters

Figure 4

From: Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

Figure 4

Ratios of the positron–electron momentum distribution of the annihilating pair in SiGe a “as grown” (full symbols) and SiGe b annealed (open symbols) relative to bulk Si. Linear combination fits for a “as grow” (short dashed line) and b annealed (dot-dashed line). The reference spectra of defected Ge and surface/interface are shown with continue and dashed lines (after Ref. [2])

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