Figure 4
From: Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
Ratios of the positron–electron momentum distribution of the annihilating pair in SiGe a “as grown” (full symbols) and SiGe b annealed (open symbols) relative to bulk Si. Linear combination fits for a “as grow” (short dashed line) and b annealed (dot-dashed line). The reference spectra of defected Ge and surface/interface are shown with continue and dashed lines (after Ref. [2])
