Table 2 Results obtained in the Si/SiO2/Si SOI heterostructure from the positron lineshape profile (Fig. 1) using VEPFIT
From: Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
L + (nm) | t (nm) | S parameter | |
---|---|---|---|
Surface | <1 | ~2F | 0.508 ± 0.003 |
Si | 220F | 2F | 0.551F |
SiO2 | 17 ± 4 | 149 ± 3 | 0.541 ± 0.002 |
SiO2/Si interface | ~1F | ~1F | 0.525 ± 0.004 |
Si | 220 ± 20 | ∞ | 0.551 ± 0.001 |