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Table 2 Results obtained in the Si/SiO2/Si SOI heterostructure from the positron lineshape profile (Fig. 1) using VEPFIT

From: Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

  L + (nm) t (nm) S parameter
Surface <1 ~2F 0.508 ± 0.003
Si 220F 2F 0.551F
SiO2 17 ± 4 149 ± 3 0.541 ± 0.002
SiO2/Si interface ~1F ~1F 0.525 ± 0.004
Si 220 ± 20 0.551 ± 0.001
  1. Positron diffusion length L +, thickness t, and Doppler S parameter. Fixed parameters are marked with the letter F
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