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Table 2 Results obtained in the Si/SiO2/Si SOI heterostructure from the positron lineshape profile (Fig. 1) using VEPFIT

From: Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

 

L + (nm)

t (nm)

S parameter

Surface

<1

~2F

0.508 ± 0.003

Si

220F

2F

0.551F

SiO2

17 ± 4

149 ± 3

0.541 ± 0.002

SiO2/Si interface

~1F

~1F

0.525 ± 0.004

Si

220 ± 20

0.551 ± 0.001

  1. Positron diffusion length L +, thickness t, and Doppler S parameter. Fixed parameters are marked with the letter F

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