Figure 1From: GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation Schematic diagram illustrates (a) the layer structure of the simple bar Hellish-VCSOA and (b) the refractive index profile and distribution of the electric filed intensity across the sample, in which the QWs are situated at the antinode of the electric field, i.e. where it reaches its maximum intensity. Back to article page