Figure 10From: GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation Continuous line represents the calculated temperature dependence of bandgap energy for the device active area (GaInNAs/GaAs QW) using the BAC model, while the expected cavity resonance position is plotted with a dashed line and finally the scattered points represent the experimental data for PL (asterisks) and EL (squares). Back to article page