Figure 13
From: GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation
Gain characteristics are measured as a function of applied voltages at T = 300 K.
Figure 13 | Nanoscale Research Letters
From: GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation
Gain characteristics are measured as a function of applied voltages at T = 300 K.