Table 1 Thicknesses of the Al2O3 and SiO2 layers obtained from X-ray reflectrometry on the amorphous and polycrystalline samples
From: Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics
Phase | Al2O3thickness (nm) | SiO2thickness (nm) | EOT (nm) |
|---|---|---|---|
Amorphous | 14.6 | 1.0 | 7.3 |
Polycrystalline | 12.4 | 1.2 | 6.6 |