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Table 1 Thicknesses of the Al2O3 and SiO2 layers obtained from X-ray reflectrometry on the amorphous and polycrystalline samples

From: Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Phase Al2O3thickness (nm) SiO2thickness (nm) EOT (nm)
Amorphous 14.6 1.0 7.3
Polycrystalline 12.4 1.2 6.6
  1. The EOT was estimated by considering a permittivity of 9.1 for the Al2O3 layer.