Figure 9From: Conductive-probe atomic force microscopy characterization of silicon nanowire CP-AFM I - V measurements on single phosphorus-doped SiNWs for different doping levels : (a) undoped, (b) [P] ≈ 1 × 1018 cm-3, and (c) [P] ≈ 1 × 1020 cm-3 Back to article page