Figure 2From: Nanoscale characterization of electrical transport at metal/3C-SiC interfaces TEM images of the Pt(Pt 2 Si)/SiC interface. Bright-field, cross-section TEM images of the Pt(Pt2Si)/3C-SiC interface for the as-deposited Pt (a) and after annealing at 500°C (b), 700°C (c), and 900°C (d).Back to article page