Figure 3From: Nanoscale characterization of electrical transport at metal/3C-SiC interfaces Morphology of the SiC surface and current map of an adjacent Pt contact. AFM morphology of the 3C-SiC(001) surface (a) and C-AFM current map determined at a tip bias of −5 V on an adjacent Pt contact after annealing at 500°C (b).Back to article page