Skip to main content

Advertisement

Table 1 Growth parameters and the thickness for samples A-D

From: Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

Sample Growth temperature (°C) As4/Mn BEP ratio Furnace cooling Thickness (nm) GaAs substrate
A 230 300 N 11 GaAs (001)
B 210 175 N 3 GaAs (110)
C 210 300 N 11 GaAs (110)
D 210 175 Y 11 GaAs (110)