Table 1 Growth parameters and the thickness for samples A-D
From: Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
Sample | Growth temperature (°C) | As4/Mn BEP ratio | Furnace cooling | Thickness (nm) | GaAs substrate |
|---|---|---|---|---|---|
A | 230 | 300 | N | 11 | GaAs (001) |
B | 210 | 175 | N | 3 | GaAs (110) |
C | 210 | 300 | N | 11 | GaAs (110) |
D | 210 | 175 | Y | 11 | GaAs (110) |