Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Table 1 Sample names and deposition conditions

Sample name	Silicon-rich concentration (volume percentage v%)	Sample structure/thickness (nm)
SRC80	80	Single layer/approximately 600
SRC70	70	Single layer/approximately 600
SRC60	60	Single layer/approximately 600
SRC50	50	Single layer/approximately 600
SiC	0	Single layer/approximately 600