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Table 1 Sample names and deposition conditions

From: Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Sample name Silicon-rich concentration (volume percentage v%) Sample structure/thickness (nm)
SRC80 80 Single layer/approximately 600
SRC70 70 Single layer/approximately 600
SRC60 60 Single layer/approximately 600
SRC50 50 Single layer/approximately 600
SiC 0 Single layer/approximately 600