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Table 2 Temperature ramping profile for conventional furnace annealing and RTA

From: Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

  Room temperature, approximately 500°C 500°C to approximately 900°C 900°C to approximately 1,100°C 1,100°C
Conventional furnace annealing N/A 25 min 15 min 60 min
RTA 15 min 30 s 15 s 2 min