Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Table 2 Temperature ramping profile for conventional furnace annealing and RTA

	Room temperature, approximately 500°C	500°C to approximately 900°C	900°C to approximately 1,100°C	1,100°C
Conventional furnace annealing	N/A	25 min	15 min	60 min
RTA	15 min	30 s	15 s	2 min