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Table 3 Degree of crystallization from RTA and furnace annealing in all Si concentration

From: Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

 

Si concentration

(50 to approximately 60 v%)

Si Concentration

(70 v%)

Si Concentration

(80 v%)

++Degree of crystallization: D RTA/D furance (from XRD)

1

2.4

2.8

Degree of crystallization: D RTA/D furnace (from Raman)

1

2.2

2.6

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