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Table 3 Degree of crystallization from RTA and furnace annealing in all Si concentration

From: Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

  Si concentration (50 to approximately 60 v%) Si Concentration (70 v%) Si Concentration (80 v%)
++Degree of crystallization: D RTA/D furance (from XRD) 1 2.4 2.8
Degree of crystallization: D RTA/D furnace (from Raman) 1 2.2 2.6