Figure 2From: Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization Capacitance and sheet carrier density versus gate bias. Capacitance versus gate bias (C-V GS) (a) and sheet carrier density versus gate bias (n s -V GS) (b) measured on the untreated (squares) and plasma treated (triangles) devices.Back to article page