Figure 4From: Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization C-AFM scans. Schematic of the C-AFM measurement setup (a) used to measure conductivity changes in a sample locally treated with CHF3 plasma (on lithographically defined stripes) and annealed at 400°C. AFM morphology (b) and C-AFM transversal current map (c) of the sample.Back to article page