Figure 5From: Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates Magnetoresistance measurements of the best sample at different temperatures. (a) Longitudinal and transverse resistances of low p-type doped (n s = 8 × 1011 cm-2) epitaxial monolayer versus applied magnetic field B, at different temperatures. (b) Temperature dependence of the resistivity ρ xx of a graphene ribbon at different magnetic field values close to the filling factor v = 3. The slope in the semilog scale gives the activation energy E a, which is the energy difference between the Fermi energy and the mobility edge of the second (N = 1) Landau level.Back to article page