Figure 2
RBS spectra from as grown and thermally oxidized Si:Me/SiO 2 /Si samples: (a) RBS spectra (E = 1.5 MeV, θ = 75°) from Si:Pt/SiO2/Si samples thermally oxidized at T = 725°C for 60 min in O2 followed by thermal annealing in N2 at T = 900°C for 30 s. as compared with as-grown structure; (b) Au peak in RBS spectra evidences strong Au segregation during Si oxidation process at different temperatures.