Figure 4From: Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture High-frequency C - V curves measured from Si:Au and Si:Pt samples, oxidized at T = 640°C for 5 and 9 h in dry O 2 , respectively. A gate voltage sweep from inversion to accumulation and from accumulation to inversion is shown on the figure by arrows.Back to article page