Figure 1
From: Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals
AFM images of 3-nm-thick gold films deposited on Silicon Ltd. Si substrates with different surface oxide layer states: (a) initial substrate with 2.4-nm-thick natural oxide layer; (b) substrate with an oxide layer modified by RTA (650°C, 15 s, oxide thickness after RTA is 1.7 nm); and (c) substrate after RTA (950°C, 15 s) with a 3.3-nm-thick modified oxide layer. The maps of heights are shown on the left-hand side; the same maps with distinguished grain boundaries are shown on the right-hand side. Numerical grain parameters are shown in Figure 2.