Figure 3
From: Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals
AFM images of the surfaces of 3-nm-thick gold film deposited onto Silicon Ltd. Si substrates with the natural oxide layer after RTA: (a) 900°C, 15 s; (b) 1000°C, 20 s; and (c) 1050°C, 20 s. The maps of heights are shown on the left-hand side; the same maps with distinguished grain boundaries are shown on the right-hand side. For quantitative parameters see Figure 4.