Figure 5
From: Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals
AFM images of the surfaces of 3-nmthick gold films deposited onto the Wacker-Chemitronic Si substrates with the natural oxide layer after 15 s RTA: (a) 400°C; (b) 700°C; (c) 950°C; and (d) 1050°C. The maps of heights are shown on the left hand side; the same maps with distinguished grain boundaries are shown on the right hand side. For quantitative parameters see Figure 6.