Figure 8
From: Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals
AFM images of the surface of 5-nm-thick gold film deposited on Wacker-Chemitronic Si substrates with different thicknesses of grown oxide and subjected to 15 s RTA at 950°C: (a) oxide thickness is 1.8 nm; (b) oxide thickness is 1.9 nm; (c) oxide thickness is 2.0 nm. The maps of heights are shown on the left-hand side; the same maps with distinguished grain boundaries are shown on the right-hand side. For quantitative parameters see Figure 9.