Figure 4From: Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC AFM images and C - AFM current map for samples annealed without a protective carbon capping layer. Surface morphology (a) and C-AFM current map (b) on a contact Ti/Al fabricated on the Al+-implanted 4H-SiC surface and annealed at 1700°C without a protective carbon capping layer.Back to article page