TEY-XANES spectra at the Si K-edge for (a) low (Si
< 1%) and (b) high (Si
= 5%) excess silicon content films deposited by the ICP CVD system and annealed in a quartz tube furnace under N
+ 5% H
ambient gas. The insets included with each plot show a magnified view of the Si-Si absorption edge with the offset between spectra removed. A Si-Si resonance shoulder onsets at temperatures as low as 900°C in the low Si content film and 600°C in the high Si content film.