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Figure 5 | Nanoscale Research Letters

Figure 5

From: Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters

Figure 5

TEY-XANES spectra at the Si K-edge for (a) low (Si ex < 1%) and (b) high (Si ex = 5%) excess silicon content films deposited by the ICP CVD system and annealed in a quartz tube furnace under N 2 + 5% H 2 ambient gas. The insets included with each plot show a magnified view of the Si-Si absorption edge with the offset between spectra removed. A Si-Si resonance shoulder onsets at temperatures as low as 900°C in the low Si content film and 600°C in the high Si content film.

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