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Figure 6 | Nanoscale Research Letters

Figure 6

From: Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters

Figure 6

FLY-XANES spectra at the Si L 3,2 -edge for (a) low (Si ex < 1%) and (b) high (Si ex = 5%) excess silicon content films deposited by the ICP CVD system and annealed in a quartz tube furnace under flowing N 2 + 5% H 2 gas. The spectra are offset by a constant value in the order they are listed in the legend, and the (100)Si spectra are normalized to the Si-Si absorption edge step in the 1100°C spectra for better comparison.

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