FLY-XANES spectra at the Si L
-edge for (a) low (Si
< 1%) and (b) high (Si
= 5%) excess silicon content films deposited by the ICP CVD system and annealed in a quartz tube furnace under flowing N
+ 5% H
gas. The spectra are offset by a constant value in the order they are listed in the legend, and the (100)Si spectra are normalized to the Si-Si absorption edge step in the 1100°C spectra for better comparison.