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Figure 9 | Nanoscale Research Letters

Figure 9

From: Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters

Figure 9

PL characteristics of films with Si ex = 3% annealed at 600 and 800°C. The plots depict (a) the peak PL energy and (b) the total power density of films annealed for times ranging from 2 s to 2 h under flowing N2 ambient gas. Logarithmic fit lines are included in (a) to emphasize the trend of peak PL energy shifting to lower energies with longer annealing times and are not intended to represent a model.

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