Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters

Table 1 System specific details for SRSN thin film depositions

CVD system	Si source gas	N source gas	RF/MW power (W)	Film thickness (Å)	Deposition rate (Å/min)
PECVD	5% SiH₄/Ar	NH₃	50	2200-2600	110-130
ICP CVD	30% SiH₄/Ar	N₂	300	2400-3000	26-30
ECR PECVD	30% SiH₄/Ar	10% N₂/Ar	500	800-1200	53-60