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Table 1 System specific details for SRSN thin film depositions

From: Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters

CVD system Si source gas N source gas RF/MW power (W) Film thickness (Å) Deposition rate (Å/min)
PECVD 5% SiH4/Ar NH3 50 2200-2600 110-130
ICP CVD 30% SiH4/Ar N2 300 2400-3000 26-30
ECR PECVD 30% SiH4/Ar 10% N2/Ar 500 800-1200 53-60