Figure 1
From: Electrical behavior of MIS devices based on Si nanoclusters embedded in SiO x N y and SiO2 films
Comparison of devices. (a) Linear current density-voltage characteristics of MIS structure based on SiO2-Sinc and SiO x N y -Sinc layer. Inset: Schematic cross section of the tested MIS structures, (b) current density-voltage characteristics of MIS structure based on SiO x N y -Sinc layer plotted in semi log scale.
