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Figure 1 | Nanoscale Research Letters

Figure 1

From: Hf-based high-k materials for Si nanocrystal floating gate memories

Figure 1

C-V characteristics of MIS structures containing pure HfO 2 and HfSiO films. High-frequency C-V characteristics of pure and Si-rich HfO2 single layers versus Si content in the films (a) and deposition temperature (b) measured at 100 kHz. The C-V curves were normalized to their respective accumulation capacitance. All the high-k films were annealed at 800°C for 15 min. Deposition temperature is mentioned in the figures.

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