Figure 3
From: Hf-based high-k materials for Si nanocrystal floating gate memories
C-V data of single HfSiO layer and HfSiO/SRSO/HfSiO structure measured at different frequencies. Comparison of C-V data for single HfSiO layer (a) and HfSiO/SRSO/HfSiO structure (b) measured at different frequencies. R Si = 12%. Annealing treatment at T A = 950°C, t A = 15 min, N2 flow. Inset of figure (b) demonstrates variation of ΔV fb versus applied frequency at 6 V sweep voltage.