Figure 3From: Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application (Color online) Frequency dependent C-V and G-V characteristics. Frequency-dependent C-V and G-V characteristics of Al/SiN/HfO2/SiO2/Si MIS structures with Ge+ implanted at two different energies (a) 3 keV (sample A3) and (b) 5 keV (sample A5) taken in the frequency range of 10-500 kHzBack to article page