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Figure 5 | Nanoscale Research Letters

Figure 5

From: Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN x :H films

Figure 5

Room temperature PL spectra. (a) (Color online) Room temperature PL spectra of the sample S3 (29 at.% of silicon excess) subjected to thermal annealing within the temperature range of 500-1100°C, evolution of PL intensities (b), and energies (c) as a function of annealing temperature, (d) evolution of PL intensity of the sample S2, which has been subjected to annealing at 1100°C in N2, and subsequently in forming gas (10% H2 + 90% N2

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