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Figure 6 | Nanoscale Research Letters

Figure 6

From: Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN x :H films

Figure 6

(Color online) High-frequency (100 kHz) C-V characteristics of Al/Si 3 N 4 /SRSN/SiO 2 /Si (MNNOS) memory capacitors of (a) the sample S4 containing 33 at.% of excess silicon, (b) the sample S2 containing 25 at.% of excess silicon, (c) evolution of memory window (calculated from flat-band shifts) versus excess silicon at two different annealing temperatures (1000 and 1100°C).

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