Figure 7From: Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN x :H films (Color online) Frequency-dependent G - V characteristics of Al/Si 3 N 4 /SRSN/SiO 2 /Si (MNNOS) structure containing 25 at.% of Si excess in the range 10-500 kHz.Back to article page