TY - JOUR AU - Galbiati, N. AU - Grilli, E. AU - Guzzi, M. AU - Albertini, P. AU - Brusaferri, L. AU - Pavesi, L. AU - Henini, M. AU - Gasparotto, A. PY - 1997 DA - 1997// TI - Investigation of Si as an n-type dopant in AlGaAsgrown by molecular beam epitaxy on high index planes JO - Semicond Sci Technol VL - 12 UR - https://doi.org/10.1088/0268-1242/12/5/007 DO - 10.1088/0268-1242/12/5/007 ID - Galbiati1997 ER - TY - JOUR AU - Pavesi, L. AU - Henini, M. AU - Johnston, D. AU - Harrison, I. PY - 1995 DA - 1995// TI - A comparison of Si-doped (100), (111)A, (111)B and (311)B AlxGa1-xAs samples grown by molecular beam epitaxy JO - Semicond Sci Technol VL - 10 UR - https://doi.org/10.1088/0268-1242/10/1/008 DO - 10.1088/0268-1242/10/1/008 ID - Pavesi1995 ER - TY - JOUR AU - Bose, S. S. AU - Lee, B. AU - Kim, M. H. AU - Stillman, G. E. AU - Wang, W. I. PY - 1988 DA - 1988// TI - Influence of the substrate orientation on Si incorporation in molecular-beam epitaxial GaAs JO - J Appl Phys VL - 63 UR - https://doi.org/10.1063/1.340066 DO - 10.1063/1.340066 ID - Bose1988 ER - TY - JOUR AU - Mochizuki, K. AU - Goto, S. AU - Kusano, C. PY - 1991 DA - 1991// TI - (311) A substrates supperession of Be transport during GaAs molecular beam epitaxy JO - Appl Phys Lett VL - 58 UR - https://doi.org/10.1063/1.104728 DO - 10.1063/1.104728 ID - Mochizuki1991 ER - TY - JOUR AU - Zhang, D. H. AU - Radhakrishnan, K. AU - Yoon, S. F. AU - Han, Z. Y. PY - 1995 DA - 1995// TI - Photoluminescence in degenerate p-type GaAs layers grown by molecular beam epitaxy JO - Mater Sci Eng VL - B35 UR - https://doi.org/10.1016/0921-5107(95)01364-4 DO - 10.1016/0921-5107(95)01364-4 ID - Zhang1995 ER - TY - JOUR AU - Fujita, S. AU - Bedair, S. M. AU - Littlejohn, M. A. AU - Hauser, J. R. PY - 1980 DA - 1980// TI - Doping characteristics and electrical properties of Be-doped p-type AlxGa1-xAs by liquid phase epitaxy JO - J Appl Phys VL - 51 UR - https://doi.org/10.1063/1.327499 DO - 10.1063/1.327499 ID - Fujita1980 ER - TY - JOUR AU - Galbiati, N. AU - Grilli, E. AU - Guzzi, M. AU - Henini, M. AU - Pavesi, L. PY - 1997 DA - 1997// TI - Is the be incorporation the same in (311)A and (100) AlGaAs? JO - J Microelectron VL - 28 UR - https://doi.org/10.1016/S0026-2692(96)00139-5 DO - 10.1016/S0026-2692(96)00139-5 ID - Galbiati1997 ER - TY - JOUR AU - Lang, D. V. PY - 1974 DA - 1974// TI - Deep-level transient spectroscopy: A new method to characterize traps in semiconductors JO - J Appl Phys VL - 45 UR - https://doi.org/10.1063/1.1663719 DO - 10.1063/1.1663719 ID - Lang1974 ER - TY - JOUR AU - Dobaczewski, L. AU - Peaker, A. R. AU - Bonde Nielsen, K. PY - 2004 DA - 2004// TI - Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors JO - J Appl Phys VL - 96 UR - https://doi.org/10.1063/1.1794897 DO - 10.1063/1.1794897 ID - Dobaczewski2004 ER - TY - JOUR AU - Galbiati, N. AU - Pavesi, L. AU - Grilli, E. AU - Guzzi, M. AU - Henini, M. PY - 1996 DA - 1996// TI - Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy JO - Appl Phys Lett VL - 69 UR - https://doi.org/10.1063/1.116990 DO - 10.1063/1.116990 ID - Galbiati1996 ER - TY - JOUR AU - Szatkowski, J. AU - Placzek-Popko, E. AU - Sieranski, K. PY - 1999 DA - 1999// TI - Deep hole traps in Be-doped Al0.5Ga0.5As layers grown by molecular beam epitaxy JO - J Appl Phys VL - 86 UR - https://doi.org/10.1063/1.370907 DO - 10.1063/1.370907 ID - Szatkowski1999 ER - TY - JOUR AU - Szatkowski, J. AU - Sieranski, K. AU - Hajdusianek, A. AU - Placzek-Popko, E. PY - 2003 DA - 2003// TI - Deep hole traps in Be-doped Al0.2Ga0.8As layers grown by molecular beam epitaxy JO - Physica B VL - 340-342 UR - https://doi.org/10.1016/j.physb.2003.09.071 DO - 10.1016/j.physb.2003.09.071 ID - Szatkowski2003 ER - TY - JOUR AU - Markevich, V. P. AU - Peaker, A. R. AU - Litvino, V. V. AU - Murin, L. I. AU - Abrosomov, N. V. PY - 2006 DA - 2006// TI - Electric field enhancement of electron emission from deep level traps in Ge crystals JO - Physica B VL - 376-377 UR - https://doi.org/10.1016/j.physb.2005.12.053 DO - 10.1016/j.physb.2005.12.053 ID - Markevich2006 ER - TY - JOUR AU - Martin, P. A. AU - Streetman, B. G. AU - Hess, K. PY - 1981 DA - 1981// TI - Electric field enhanced emission from non-Coulombic traps in semiconductors JO - J Appl Phys VL - 52 UR - https://doi.org/10.1063/1.328731 DO - 10.1063/1.328731 ID - Martin1981 ER - TY - CHAP AU - Stanaway, M. B. AU - Grimes, R. T. AU - Halliday, D. P. AU - Chamberlain, J. M. AU - Henini, M. AU - Hughes, O. H. AU - Davies, M. AU - Hill, G. PY - 1988 DA - 1988// TI - Residual impurities in autodoped n-GaAs grown by MBE BT - Institute of Physics Conference Series 95: Chapter 4. Presented at International Conference on Shallow Impurities in Semiconductors PB - Linkoping CY - Sweden ID - Stanaway1988 ER - TY - JOUR AU - Ganichev, S. D. AU - Ziemann, E. AU - Prettl, W. AU - Yassievich, I. N. AU - Istrastov, A. A. AU - Weber, E. R. PY - 2000 DA - 2000// TI - Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors JO - Phys Rev B VL - 61 UR - https://doi.org/10.1103/PhysRevB.61.10361 DO - 10.1103/PhysRevB.61.10361 ID - Ganichev2000 ER -