Figure 2From: Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE Arrhenius plot for each hole trap is obtained from Laplace DLTS measurements. Subscripts A, B, C, D, E and F refer to samples NU1362, NU1363, NU1364, NU1365, NU1366 and NU1367, respectively.Back to article page