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Table 1 Trap parameters calculated from DLTS and Laplace DLTS spectra

From: Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

Sample ID Substrate Type Intensional Doping (cm-3) Trap Activation Energy(eV) Capture Cross-Section (cm2) Trap Concentration (cm-3) Poole-Frenkel Constant (αPF) × 10-5[(eV)2cm/V]1/2
NU1362 (100) 1 × 1016 HA1 0.041 ± 0.002 8.32 × 10-15 2.09 × 1013 10.5
    HA2 0.145 ± 0.006 5.35 × 10-13 2.74 × 1013 27.3
    HA3 0.406 ± 0.006 1.89 × 10-13 1.67 × 1014 -
NU1363 (311)A 1 × 1016 HB1 0.014 ± 0.006 1.03 × 10-15 9.83 × 1014 2.2
    HB2 0.017 ± 0.004 1.56 × 10-16 7.85 × 1014 -
    HB3 0.305 ± 0.006 5.84 × 10 -16 1.74 × 1013 4.2
    HB4 0.400 ± 0.003 3.92 × 10-10 7.35 × 1013 -
    HB5 0.430 ± 0.003 1.49 × 10-12 3.24 × 1014 -
NU1364 (100) 3 × 1016 HC1 0.356 ± 0.013 1.45 × 10-14 1.37 × 1013 7.7
    HC2 0.383 ± 0.003 8.32 × 10-13 8.01 × 1013 6.2
    HC3 0.403 ± 0.004 8.32 × 10-13 8.01 × 1013 -
    HC4 0.554 ± 0.007 2.29 × 10-13 7.68 × 1013 -
NU1365 (311)A 3 × 1016 HD1 0.013 ± 0.001 1.58 × 10-16 1.43 × 1014 2.0
    HD2 0.450 ± 0.004 2.49 × 10-13 3.42 × 1014 -
NU1366 (100) 1 × 1017 HE1 0.021 ± 0.002 3.84 × 10-19 2.88 × 1013 -
    HE2 0.130 ± 0.005 1.38 × 10-18 4.69 × 1013 -
NU1367 (311)A 1 × 1017 HF1 0.028 ± 0.004 3.83 × 10-15 8.47 × 1013 -