Figure 2From: Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers Calibration of H incorporation with ERDA. (a) 1.6 MeV 4He+ ERDA spectra of H in the a-Si single layers hydrogenated at flow rates of 0.4, 0.8 and 1.5 ml/min (#4, #8 and #15, respectively, in the plot). (b) Total H concentration in a-Si (solid black line) and a-Ge (dash blue line) layers as a function of the H flow rate as determined by ERDA.Back to article page